The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Full text!- Format:
- e-book
- Title:
- The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
- Language:
- English
- Publisher:
- Springer Berlin Heidelberg 2016
- ISBN:
- 3-662-49681-X
3-662-49683-6 - Permalink:
- http://bibtest.howest.be/catalog/ebk03:3710000000621691?locale=en