Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Type:

e-book

Titel:

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Auteur:

Park; Ishiwara, Hiroshi; Ishiwara, Hiroshi; Okuyama, Masanori; Okuyama, Masanori; Sakai, Shigeki; Sakai, Shigeki; Yoon, Sung-Min; Yoon, Sung-Min

Taal:

Engels

Uitgever:

Springer Singapore 2020

ISBN:

981-15-1211-6
981-15-1212-4

Permalink:

http://bibtest.howest.be/catalog/ebk03:4100000010770719